Part Number Hot Search : 
3C472J SD1040CS TP518 SI4210DY HD14051 256KI 23M050 DTD113
Product Description
Full Text Search
 

To Download UM5062 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ___________________________________________________________________________ http://www.union-ic.com rev.01 nov.2008 1/6 UM5062 dual line esd protection diode array UM5062 qfn3 1.41.1 general description the UM5062 esd protection diode is designed to replace multilayer varistors (mlvs) in portable applications such as cell phones, notebook computers, and pda?s. it features large cross-sectional area junctions for conducting high transient currents, offers desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to mlvs. the UM5062 esd protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (esd) and other voltage induced transient events. the UM5062 is available in a qfn3 1.4mm1.1mm package with working voltages of 5 volt. it gives designer the flexibility to protect one or two unidirectional line in applications where arrays are not practical. additionally, it may be ?sprinkl ed? around the board in applications where board space is at a premium. it may be used to meet the esd immunity requirements of iec 61000-4-2, level 4 (15kv air, 8kv contact discharge). applications features cell phone handsets and accessories microprocessor based equipment personal digital assistants (pda?s) notebooks, desktops, and servers portable instrumentation cordless phones digital cameras peripherals mp3 players transient protection for data & power lines to iec 61000-4-2 (esd) 15kv (air), 8kv (contact) small package for use in portable electronics suitable replacement for mlv?s in esd protection applications protect one or two i/o line s low clamping voltage stand off voltages: 5v low leakage current solid-state silicon-avalanche technology pin configurations ( bottom view) (top view) xx: weekly code UM5062 qfn3 1.41.1
___________________________________________________________________________ http://www.union-ic.com rev.01 nov.2008 2/6 UM5062 ordering information part number working voltage packaging type channel marking code shipping qty UM5062 5.0v qfn3 1.41.1 2 ad 3000/7 inch reel absolute maximum ratings rating symbol value units peak pulse power (tp = 8/20 s) p pk 140 watts maximum peak pulse current (t=8/20 s) i pp 11 amps lead soldering temperature t l 260 (10 sec.) c operating temperature t j -55 to +125 c storage temperature t stg -55 to +150 c - symbol definition parameter symbol maximum reverse peak pulse current i pp clamping voltage @ i pp v c working peak reverse voltage v rwm maximum reverse leakage current @ v rwm i r breakdown voltage @ i t v br test current i t forward current i f forward voltage @ i f v f peak power dissipation p pk max. capacitance @ v r = 0v, f = 1mhz c
___________________________________________________________________________ http://www.union-ic.com rev.01 nov.2008 3/6 UM5062 electrical characteristics (t=25c, device for 5.0v reverse stand-off voltage) parameter symbol conditions min typ max unit reverse stand-off voltage v rwm 5 v reverse breakdown voltage v br it = 1ma 6 6.8 7.2 v reverse leakage current i r vrwm = 5v, t=25c 0.1 a i pp = 5a, t p = 8/20 s 9.1 clamping voltage v c i pp =11a, t p = 8/20 s 13 v forward voltage v f i f = 10ma 0.8 v junction capacitance c j v r = 0v, f = 1mhz 40 55 pf junction capacitance c j v r = 2.5v, f = 1mhz 30 40 pf typical operating characteristics non-repetitive peak pulse power vs. pulse time clamping voltage vs. peak pulse current 0.04 0.1 1 10 100 1000 0.02 0.1 1 peak pulse power - ppk(kw) pulse duration - tp(us) 0246810 6 7 8 9 10 11 12 13 waveform parameters: tr=8us td=20us clamping voltage - vc(v) peak pulse current - ipp(a) forward voltage vs. forward current junction capacitance vs. reverse voltage 246810 1 2 3 4 5 6 waveform parameters: tr=8us td=20us forward voltage - vf(v) forward current - if(a) 012345 30 35 40 45 50 junction capacitance(pf) reverse voltage (v)
___________________________________________________________________________ http://www.union-ic.com rev.01 nov.2008 4/6 UM5062 applications information device connection options UM5062 esd protection diode is designed to protect one or two i/o line s . the device is unidirectional and may be used on lines where the signal polarity is above ground. the cathode band should be placed towards the line that is to be protected. circuit board layout recommenda tions for suppression of esd good circuit board layout is critical for the suppression of esd induced transients. the following guidelines are recommended: place the tvs near the input terminals or connectors to restrict transient coupling. minimize the path length between the tvs and the protected line. minimize all conductive loops including power and ground loops. the esd transient return path to ground should be kept as short as possible. never run critical signals near board edges. use ground planes whenever possible. for multilayer printed-circuit boards, use ground vias. keep parallel signal paths to a minimum. avoid running protection conductors in parallel with unprotected conductor. minimize all printed-circuit board conductiv e loops including power and ground loops. avoid using shared transient return paths to a common ground point. matte tin lead finish matte tin has become the industry standard le ad-free replacement for snpb lead finishes. a matte tin finish is composed of 100% tin solder with large grains. since the solder volume on the leads is small compared to the solder paste volume that is placed on the land pattern of the pcb, the reflow profile will be determined by the requirements of the solder paste. therefore, these devices are co mpatible with both lead-free an d snpb assembly techniques. in addition, unlike other lead-free compositions, matte tin does not have any added alloys that can cause degradation of the solder joint.
___________________________________________________________________________ http://www.union-ic.com rev.01 nov.2008 5/6 UM5062 package information UM5062 qfn3 1.41.1 outline drawing dimensions millimeters symbol min typ max a 0.47 0.50 0.53 a1 0 0.02 0.05 d 1.35 1.40 1.475 e 1.05 1.10 1.175 d1 0.65 0.75 0.85 e1 0.65 0.75 0.85 b 0.25 0.30 0.35 l 0.225 0.275 0.325 e 0.55 land pattern notes: 1. compound dimension: 1.401.10: 2. unit: mm; 3. general tolerance0.05mm unless otherwise specified; 4. the layout is just for reference. tape and reel specification
___________________________________________________________________________ http://www.union-ic.com rev.01 nov.2008 6/6 UM5062 important notice the information in this document has been carefully reviewed and is believed to be accurate. nonetheless, this document is subject to change without notice. union assumes no responsibility for any inaccuracies that may be contained in this document, and makes no commitment to update or to keep current the contained information, or to notify a person or organization of any update. union reserves the right to make changes, at any time, in order to improve reliability, function or design and to attempt to supply the best product possible. union semiconductor, inc add: 7f, no. 5, bibo road, shanghai 201203 tel: 021-51097928 fax: 021-51026018 website: www.union-ic.com


▲Up To Search▲   

 
Price & Availability of UM5062

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X